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Saturday, July 11, 2020 | History

2 edition of new photoconductive material for use in high voltage applications. found in the catalog.

new photoconductive material for use in high voltage applications.

Jodie T. Spicer

new photoconductive material for use in high voltage applications.

by Jodie T. Spicer

  • 76 Want to read
  • 32 Currently reading

Published .
Written in English


Edition Notes

Thesis (M. Phil.) - University of Brighton.

ContributionsUniversity of Brighton. School of Engineering.
ID Numbers
Open LibraryOL21234567M

This electron-hole pair is free to serve as current carriers and hence, the conductivity of the material increases or the electrical resistance is reduced. Construction and Working: The material generally used in photoconductive cells are cadmium sulphode (CdS), Cadmium salenide (CdSe) or lead sulphide (PbS). Commonly used material in CdS. Characteristics of Trap-Filled GaAs Photoconductive Switches Used in High Gain Pulsed Power Applications J.S.H. Schoenberg, and R.P. Joshi, “Analysis of High Voltage Operation of Gallium Arsenide Photoconductive Switches Used in High Power Applications,” J. Appl. Phys., vol. 86, p. , () Characteristics of Trap-Filled.

Photoconductive Mode. Saturation behavior in the photoconductive mode can be understood by referring to the load-line analysis of Fig. The load line has a slope -1/R L, with an intercept on the voltage axis of V d = -V B. As the incident optical power increases, the operating point moves downward and to the right along the load line, decreasing the magnitude of reverse-bias voltage and. We report the high power operation of nitrogen doped, vanadium compensated, 6H-SiC, extrinsic photoconductive switches with improved vanadium and nitrogen dopant density. Photoconductive switching tests are performed on 1 mm thick, m-plane, switch substrates at switch voltage and currents up to 17 kV and kA, respectively.

Photo conductive and photoconductive detectors: The phenomenon of increasing in electrical conductivity of the crystal with respect to the incident light radiation onto the crystal is called photoconductivity. For photoconductive materials, incident light will cause the number of charge carriers in the active area to increase, thus decreasing the resistance of the detector. This change in resistance leads to a change in measured voltage, and hence, photosensitivity is expressed in units of V/W.


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New photoconductive material for use in high voltage applications by Jodie T. Spicer Download PDF EPUB FB2

Siliconcarbideis a wide-band-gapsemiconductorsuitable for high-power high-voltage devicesand it has excellent properties for use in photoconductive semiconductorswitches (PCSSs).

PCSS were fabricatedas planar structures on high-resistivity4H–SiC and tested at dc bias voltages Cited by: Semi-insulating Gallium Nitride is evaluated as a candidate material for use as a high voltage photoconductive semiconductor switch (PCSS) for pulsed power applications.

Switches are at the heart of all pulsed power and directed energy systems, which find utility in a number of applications. At present, those applications requiring the highest power levels tend to employ spark-gap switches, but these suffer from relatively high delay-times (~ sec), significant jitter (variation in delay time), and large size.

That said, optically-triggered GaN-based Cited by: Semi-insulating Gallium Nitride is evaluated as a candidate material for use as a high voltage photoconductive semiconductor switch (PCSS) for pulsed power applications.

The book. use in high-power applications,” Appl. Phys. Lett., SiC has better performance than Si and GaAs semiconductor materials widely used in photoconductive semiconductor switch [4][5][6.

These materials are also used to detect infrared radiation in military applications such as guiding missiles to heat-producing targets. Photoconductivity has broad commercial application in the process of photocopying, or xerography, which originally used selenium but now relies on photoconductive polymers.

See also photoelectric effect. When a photoconductive material is connected as part of a circuit, it functions as a resistor whose resistance depends on the light this context, the material is called a photoresistor (also called light-dependent resistor or photoconductor).The most common application of photoresistors is as photodetectors, i.e.

devices that measure light intensity. An opposed-contact photoconductive semiconductor switch, with a n + region next to the cathode electrode has been simulated.

Physical conditions during the pulse charging state, prior to high power switching, are analyzed in order to explain the increased hold-off characteristic of such devices.

Results show that the introduction of the n + region near the cathode inhibits the flow of. The photoconductive cell is a two terminal semiconductor device whose terminal resistance will vary (linearly) with the intensity of the inci­dent light.

For obvious reasons, it is frequently called a photoresistive device. The photoconductive materials most frequently used include cadmium sulphide (CdS) and cadmium selenide (CdSe).

Both materials respond rather slowly to changes in light. Gaudet's 54 research works with citations and 2, reads, including: Analytic model and experimental study of the UNM educational reltron's pulsed power system. However, the filamentary nature of the conduction has been shown to damage the bulk photoconductive material, and high current densities at the contact limit the power-handling capability of these.

When there is no illumination, a photoconductive sample has a conductance that depends on its dimensions, on the specific material(s) from which it is made, and on the temperature. In most cases, the greater the radiant energy of a specific wavelength that strikes the surface, the higher the conductance of the sample becomes, up to a certain maximum.

When the maximum conductance is reached. New advances in power supply technology provide higher levels of monitoring and process control. Scientific experiments can also be influenced by power supply effects. Contributing effects such as output accuracy, stability, ripple and regulation are discussed.

INTRODUCTION. The use of high voltage in scientific and industrial applications. There are many applications for PCSS devices, some which benefit from a fast turn-on and/or turn-off response times and others that benefit from a slow turn-on and/or turn-off response times.

A major benefit of GaN and other wide bandgap semiconductors for PCSS applications is the potential for high voltage and high power switching.

photoconductive material on a ceramic substrate. Metal contacts are evaporated over the surface of the photoconductor and external electrical connection is made to these contacts.

These thin films of photoconductive material have a high sheet resistance. Therefore, the space between the two contacts is made narrow and interdigitated for. Semi-insulating silicon carbide (SiC) is an attractive material for application as high voltage, photoconductive semiconductor switches (PCSS) due to its large bandgap, high critical electric field strength, high electron saturation velocity and high thermal conductivity.

The most important application of high voltage 1. Transmission of high power across long distance with very little powe loss. High direct voltage are needed in insulation test on cables and capacitors. High voltage is needed when we use high.

In this context the material is called a photoresistor. Fig.1 depicts the current flow in a photoresistor when exposed to light rays. Semiconductor resistors that depend on the irradiance (photoconductive cells) are based on this principle. They have opened up a wide field of applications and are, among other things.

Abstract. High resistivity semiconductor materials have been used as a closing switch in a configuration for generating ultra-wideband high-power microwave radiation (Fig. 1 Compared to a conventional switch such as a spark-gap, the semiconductor switch has low jitter and a faster risetime and is comparatively compact in size.

It also has low inductance and in the non-linear mode of. They use electronic conduction in the solid state as opposed to the thermionic emission in a high vacuum. Semiconductor devices are manufactured for both discrete devices and integrated circuits, which consist of from a few to billions of devices manufactured and interconnected on a single semiconductor substrate or wafer.

@article{osti_, title = {Wide Bandgap Extrinsic Photoconductive Switches}, author = {Sullivan, James S.}, abstractNote = {Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation.The photoconductive cell is a two terminal semiconductor device whose terminal resistance will vary (linearly) with the intensity of the incident light.

For obvious reasons, it is frequently called a photoresistive device. The photoconductive materials most frequently used include cadmium sulphide (CdS) and cadmium selenide (CdSe). Voila, photoconductive. The diode is turned around. The opamp operates in transimpedance mode.

If you make Vbias=0V you are still photoconductive. The sensitivity is almost independent of the bias voltage, but the leakage current (called dark current) adds to the photocurrent. at room temperature it is very low.